Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications. Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications.
This report contains market size and forecasts of RF GaN Semiconductor Device in global, including the following market information:
Global RF GaN Semiconductor Device Market Revenue, 2017-2022, 2023-2028, ($ millions)
Global RF GaN Semiconductor Device Market Sales, 2017-2022, 2023-2028, (K Units)
Global top five RF GaN Semiconductor Device companies in 2021 (%)
The global RF GaN Semiconductor Device market was valued at million in 2021 and is projected to reach US$ million by 2028, at a CAGR of % during the forecast period 2022-2028.
The U.S. Market is Estimated at $ Million in 2021, While China is Forecast to Reach $ Million by 2028.
GaN-On-SiC Segment to Reach $ Million by 2028, with a % CAGR in next six years.
The global key manufacturers of RF GaN Semiconductor Device include Sumitomo Electric Industries, Ltd, Raytheon Company, Robert Bosch GmbH, STMicroelectronics, Hitachi, Ltd, Toshiba Corporation, Mitsubishi Electric Corporation, Infineon Technologies AG and Renesas Electronics Corporation, etc. In 2021, the global top five players have a share approximately % in terms of revenue.
MARKET MONITOR GLOBAL, INC (MMG) has surveyed the RF GaN Semiconductor Device manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global RF GaN Semiconductor Device Market, by Type, 2017-2022, 2023-2028 ($ Millions) & (K Units)
Global RF GaN Semiconductor Device Market Segment Percentages, by Type, 2021 (%)
GaN-On-SiC
GaN-On-Silicon
GaN-On-Diamond
Global RF GaN Semiconductor Device Market, by Application, 2017-2022, 2023-2028 ($ Millions) & (K Units)
Global RF GaN Semiconductor Device Market Segment Percentages, by Application, 2021 (%)
Aerospace & Defense
Telecom
Consumer Electronics
Automotive
Others
Global RF GaN Semiconductor Device Market, By Region and Country, 2017-2022, 2023-2028 ($ Millions) & (K Units)
Global RF GaN Semiconductor Device Market Segment Percentages, By Region and Country, 2021 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies RF GaN Semiconductor Device revenues in global market, 2017-2022 (Estimated), ($ millions)
Key companies RF GaN Semiconductor Device revenues share in global market, 2021 (%)
Key companies RF GaN Semiconductor Device sales in global market, 2017-2022 (Estimated), (K Units)
Key companies RF GaN Semiconductor Device sales share in global market, 2021 (%)
Further, the report presents profiles of competitors in the market, key players include:
Sumitomo Electric Industries, Ltd
Raytheon Company
Robert Bosch GmbH
STMicroelectronics
Hitachi, Ltd
Toshiba Corporation
Mitsubishi Electric Corporation
Infineon Technologies AG
Renesas Electronics Corporation
Panasonic Corporation
Microchip Technology
Aethercomm Inc.
Cree, Inc.
NXP Semiconductor
Analog Devices Inc.
ROHM Semiconductors
Qorvo Inc.